Influence of the Carbon Content on the Crystallization and Oxidation Behavior of Polymer-Derived Silicon Carbide (SiC)

Silicon Carbide (SiC) samples with controlled carbon contents are manufactured from polymeric precursors. Based on X‐ray diffraction (XRD) data, a correlation of the excess carbon content and the crystallization kinetics of silicon carbide are determined for the obtained pyrolysates. The crystallization mechanisms as well as the corresponding activation energies EA are also determined. Furthermore, the influence of the carbon content on the oxidation behavior of these pyrolysates is studied. A model for the oxidation of the prepared silicon carbide‐based materials is proposed. Based on experimental data a model describing the influence of the carbon content on the crystallization and oxidation behavior of precursor‐derived SiC is proposed. Until forming a passivating SiO2 layer, the mass loss during oxidation is formed dependent on the carbon content of the SiC.