An implantable neurostimulator with an integrated high-voltage inductive power- recovery frontend
This paper present a highly-integrated neurostimulator with an on-chip inductive power-recovery fron- tend and high-voltage stimulus generator. In particular, the power-recovery frontend includes a high-voltage full- wave rectifier （up to 100 V AC input）, high-voltage series regulators （24/5 V outpu...
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| Veröffentlicht in: | Journal of semiconductors 2014-10, Vol.35 (10), p.163-170 |
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| container_end_page | 170 |
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| container_issue | 10 |
| container_start_page | 163 |
| container_title | Journal of semiconductors |
| container_volume | 35 |
| creator | 王远 张旭 刘鸣 李鹏 陈弘达 |
| description | This paper present a highly-integrated neurostimulator with an on-chip inductive power-recovery fron- tend and high-voltage stimulus generator. In particular, the power-recovery frontend includes a high-voltage full- wave rectifier （up to 100 V AC input）, high-voltage series regulators （24/5 V outputs） and a linear regulator （1.8/ 3.3 V output） with bandgap voltage reference. With the high voltage output of the series regulator, the proposed neurostimulator could deliver a considerably large current in high electrode-tissue contact impedance. This neu- rostimulator has been fabricated in a CSMC 1 μm 5/40/700 V BCD＇process and the total silicon area including pads is 5.8 mm2. Preliminary tests are successful as the neurostimulator shows good stability under a 13.56 MHz AC supply. Compared to previously reported works, our design has advantages of a wide induced voltage range （26-100 V）, high output voltage （up to 24 V） and high-level integration, which are suitable for implantable neu- rostimulators. |
| doi_str_mv | 10.1088/1674-4926/35/10/105012 |
| format | Article |
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In particular, the power-recovery frontend includes a high-voltage full- wave rectifier （up to 100 V AC input）, high-voltage series regulators （24/5 V outputs） and a linear regulator （1.8/ 3.3 V output） with bandgap voltage reference. With the high voltage output of the series regulator, the proposed neurostimulator could deliver a considerably large current in high electrode-tissue contact impedance. This neu- rostimulator has been fabricated in a CSMC 1 μm 5/40/700 V BCD＇process and the total silicon area including pads is 5.8 mm2. Preliminary tests are successful as the neurostimulator shows good stability under a 13.56 MHz AC supply. 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| identifier | ISSN: 1674-4926 |
| ispartof | Journal of semiconductors, 2014-10, Vol.35 (10), p.163-170 |
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| language | eng |
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| source | IOP Publishing Journals; Alma/SFX Local Collection |
| subjects | Alternating current Contact Electric potential High voltages Regulators Semiconductors Silicon Voltage 前端 动力回收 感应 植入式 神经刺激器 线性调节器 高压输出 高度集成 |
| title | An implantable neurostimulator with an integrated high-voltage inductive power- recovery frontend |
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