The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)

The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996Ω−1 cm−1 is determined experimentally for the first time. Together with 821Ω−1 cm−1 in Fe(111) and 11...

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Veröffentlicht in:	Science bulletin (Beijing) 2015-07, Vol.60 (14), p.1261-1265
Hauptverfasser:	Xu, Jianli, Wu, Lin, Li, Yufan, Tian, Dai, Zhu, Kai, Gong, Xinxin, Jin, Xiaofeng
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Anomalous Hall effect arsenic Berries chemical reactions Chemistry/Food Science Curvature Earth Sciences Engineering Epitaxial growth Film thickness films (materials) gallium Hall effect Humanities and Social Sciences Intrinsic anomalous Hall effect iron Life Sciences Mathematical analysis multidisciplinary Physics Science Science (multidisciplinary) Side jump Single crystals Skew scattering temperature
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