The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)

The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)

The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996Ω−1 cm−1 is determined experimentally for the first time. Together with 821Ω−1 cm−1 in Fe(111) and 11...

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Veröffentlicht in:Science bulletin (Beijing) 2015-07, Vol.60 (14), p.1261-1265
Hauptverfasser: Xu, Jianli, Wu, Lin, Li, Yufan, Tian, Dai, Zhu, Kai, Gong, Xinxin, Jin, Xiaofeng
Format: Artikel
Sprache:eng
Schlagworte:
Anisotropy
Anomalous Hall effect
arsenic
Berries
chemical reactions
Chemistry/Food Science
Curvature
Earth Sciences
Engineering
Epitaxial growth
Film thickness
films (materials)
gallium
Hall effect
Humanities and Social Sciences
Intrinsic anomalous Hall effect
iron
Life Sciences
Mathematical analysis
multidisciplinary
Physics
Science
Science (multidisciplinary)
Side jump
Single crystals
Skew scattering
temperature
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Zusammenfassung:The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996Ω−1 cm−1 is determined experimentally for the first time. Together with 821Ω−1 cm−1 in Fe(111) and 1100Ω−1 cm−1 in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe.
ISSN:2095-9273
2095-9281
DOI:10.1007/s11434-015-0831-y