Novel Molecular Resist for EUV and Electron Beam Lithography

Novel Molecular Resist for EUV and Electron Beam Lithography

A novel molecular resist molecule was prepared by incorporation of 1,8-diazabicycloundece-7-ene into a tert-butyloxycarbonyl protected phenol malonate group. The resist shows high-resolution capability in both extreme ultraviolet (EUV) and electron beam lithography.

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Veröffentlicht in:Journal of Photopolymer Science and Technology 2015/06/15, Vol.28(4), pp.537-540
Hauptverfasser: Frommhold, Andreas, Yang, Dongxu, McClelland, Alexandra, Roth, John, Xue, Xiang, Rosamund, Mark C., Linfield, Edmund H., Robinson, Alex P. G.
Format: Artikel
Sprache:eng
Schlagworte:
electron beam
Electron beam lithography
extreme ultraviolet
lithography
molecular photoresist
Phenol
Photopolymers
Resists
Ultraviolet
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Beschreibung
Zusammenfassung:A novel molecular resist molecule was prepared by incorporation of 1,8-diazabicycloundece-7-ene into a tert-butyloxycarbonyl protected phenol malonate group. The resist shows high-resolution capability in both extreme ultraviolet (EUV) and electron beam lithography.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.28.537