Investigation of Low Temperature Process of Solution Processed Oxide Semiconductor as a Thin Film Transistor

Investigation of Low Temperature Process of Solution Processed Oxide Semiconductor as a Thin Film Transistor

A solution-processed a-IGZO TFT was fabricated at 300 °C for 6 min using MW and photoirradiation. Photoirradiation enhanced the on current and the on/off current ratio. The improvement in the TFT performance was attributed to the removal of the organic residue in the IGZO film, leading to the decrea...

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Veröffentlicht in:Journal of Photopolymer Science and Technology 2015/05/11, Vol.28(3), pp.353-355
Hauptverfasser: Cheong, Hea Jeong, Ogura, Shintaro, Yoshida, Manabu, Ushijima, Hirobumi, Fukuda, Nobuko, Uemura, Sei
Format: Artikel
Sprache:eng
Schlagworte:
Austenitic stainless steels
Charge
Indium gallium zinc oxide (IGZO) precursor solution
Microwave annealing
Oxides
Photo irradiation
Photopolymers
Residues
Semiconductor devices
Semiconductors
Thin film transistors
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Beschreibung
Zusammenfassung:A solution-processed a-IGZO TFT was fabricated at 300 °C for 6 min using MW and photoirradiation. Photoirradiation enhanced the on current and the on/off current ratio. The improvement in the TFT performance was attributed to the removal of the organic residue in the IGZO film, leading to the decrease in the charge trap.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.28.353