Ion induced modifications of Mn-doped ZnO films

Ion induced modifications of Mn-doped ZnO films

We have studied ion impact effects on atomic structure in terms of X-ray diffraction (XRD), optical absorption and electrical resistivity of Mn(6%)-doped ZnO films under 100MeV Xe ion impact at room temperature. We find the monotonic reduction of the XRD intensity to 1/50 of that of unirradiated fil...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2015-12, Vol.365, p.191-195
Hauptverfasser: Matsunami, N., Itoh, M., Kato, M., Okayasu, S., Sataka, M., Kakiuchida, H.
Format: Artikel
Sprache:eng
Schlagworte:
Curie temperature
Electrical resistivity
Fluence
Ion impact
Irradiation
Manganese
Mn-doped ZnO
Modifications of atomic- and electronic-structures and magnetism
Resistivity
X-ray diffraction
Zinc oxide
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Zusammenfassung:We have studied ion impact effects on atomic structure in terms of X-ray diffraction (XRD), optical absorption and electrical resistivity of Mn(6%)-doped ZnO films under 100MeV Xe ion impact at room temperature. We find the monotonic reduction of the XRD intensity to 1/50 of that of unirradiated film at 5×1014cm−2 and the lattice compaction of 0.6% for the ion fluence >1013cm−2, little bandgap change (
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2015.08.010