Microstructure evolution in Xe-irradiated UO2 at room temperature

In situ Transmission Electron Microscopy was conducted for single crystal UO2 to understand the microstructure evolution during 300keVXe irradiation at room temperature. The dislocation microstructure evolution was shown to occur as nucleation and growth of dislocation loops at low irradiation doses...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Nuclear Instruments and Methods in Physics Research B 2014-07, Vol.330, p.55-60
Hauptverfasser:	He, L.F., Pakarinen, J., Kirk, M.A., Gan, J., Nelson, A.T., Bai, X.-M., El-Azab, A., Allen, T.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Dislocation Dislocation loops Electron energy loss spectroscopy Evolution Inert gas bubble Irradiation Microstructure Nuclear fuel Nucleation phonons, thermal conductivity, nuclear (including radiation effects), defects, materials and chemistry by design Segments TEM Transformations
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	In situ Transmission Electron Microscopy was conducted for single crystal UO2 to understand the microstructure evolution during 300keVXe irradiation at room temperature. The dislocation microstructure evolution was shown to occur as nucleation and growth of dislocation loops at low irradiation doses, followed by transformation to extended dislocation segments and tangles at higher doses. Xe bubbles with dimensions of 1–2nm were observed after room-temperature irradiation. Electron Energy Loss Spectroscopy indicated that UO2 remained stoichiometric under room temperature Xe irradiation.
ISSN:	0168-583X 1872-9584
DOI:	10.1016/j.nimb.2014.03.018