The Effect of Oxygen-Rich Condition on Properties of ZnO: In Films by Sputtering

Indium doped zinc oxide (ZnO:In) films were prepared in oxygen-rich condition by direct current(DC) reactive magnetron sputtering. The X-ray diffraction(XRD) pattern presented that the crystal quality of ZnO:In films was improved by the introduction of nitrogen into ambience, meanwhile the element constituent was investigated by X-Ray photoelectron spectroscopy(XPS). The photoluminescence(PL) spectra showed the visible emission was originated from two different defects. The current-voltage characteristic and persistent photoconductivity(PPC) phenomena were also explained, when the oxygen vacancies(VO) may act trap centers in persistent photoconductivity.