Atomic layer deposition of MoS sub(2) thin films

Atomic layer deposition (ALD) was used to grow thin films of MoS sub(2) over 5x5 cm areas of silicon oxide coated silicon wafers. Smooth, uniform, and continuous films were produced over a temperature range of 350 [degrees]C-450 [degrees]C. The as-grown films were analyzed using x-ray photoelectron spectroscopy, Raman spectroscopy, photoluminescence, and x-ray diffraction. Electrical characteristics of the films were evaluated by fabricating a back gated field effect transistor. These analyses indicate that ALD technique can produce large area, high quality MoS sub(2) films.