C (4×4) Reconstruction on Arsenic-Rich GaAs (001) Surface after Phase Transition

C (4×4) Reconstruction on Arsenic-Rich GaAs (001) Surface after Phase Transition

C(4×4) reconstruction on arsenic-rich GaAs(001) surface after phase transition has been investigated from the experiment and simulation. We found that the c(4×4) As-rich reconstruction structure of the GaAs (001) surface can be best depicted with the model which there are three As-As dimers without...

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Veröffentlicht in:Advanced Materials Research 2013-01, Vol.669, p.19-23
Hauptverfasser: Zhou, Xun, Wang, Ji Hong, Hu, M.Z., Guo, Xiang, Zhou, Qing, Luo, Zi Jiang, Ding, Zhao, Liu, Ke
Format: Artikel
Sprache:eng
Schlagworte:
Arsenic
Computer simulation
Dimers
Gallium arsenide
Molecular structure
Phase transformations
Reconstruction
Unit cell
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Zusammenfassung:C(4×4) reconstruction on arsenic-rich GaAs(001) surface after phase transition has been investigated from the experiment and simulation. We found that the c(4×4) As-rich reconstruction structure of the GaAs (001) surface can be best depicted with the model which there are three As-As dimers without Ga-As dimers in a reconstructed unit cell, and these dimers are found to be aligned perpendicular to the As dimers on β2(2×4) surface.
ISSN:1022-6680
1662-8985
1662-8985
DOI:10.4028/www.scientific.net/AMR.669.19