The fabrication and characterization of 4H-SiC power UMOSFETs

The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors（UMOSFETs） is reported in this paper.The device has a 15-μm thick drift layer with 3×10^15 cm^-3 N-type doping concentration and a 3.1μm channel length.The measured on-state source-drain current density...

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