The fabrication and characterization of 4H-SiC power UMOSFETs

The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors（UMOSFETs） is reported in this paper.The device has a 15-μm thick drift layer with 3×10^15 cm^-3 N-type doping concentration and a 3.1μm channel length.The measured on-state source-drain current density is 65.4 A/cm^2 at Vg = 40 V and VDS = 15 V.The measured threshold voltage（Vth） is 5.5 V by linear extrapolation from the transfer characteristics.A specific on-resistance（Rsp-on） is 181 mΩ·cm^2 at Vg = 40 V and a blocking voltage（BV） is 880 V（IDS = 100 μA@880V） at Vg = 0 V.