Spin gapless semiconductor like Ti sub(2)MnAl film as a new candidate for spintronics application

A novel Heusler ferrimagnet Ti sub(2)MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin-gapless-semiconductor (SGS) nature of the stoichiometric Ti sub(2)MnAl, in agreement with theoretical prediction. The as-grown SGS-like Ti sub(2)MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor-like behavior at room temperature allowing good compatibility with commercial Si-based semiconductor. In this regards, Ti sub(2)MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. ( copyright 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) This work is the first attempt to grow successfully a Ti sub(2)-based full Heusler compound, Ti sub(2)MnAl, which is an important material for future spintronics applications as ab-initio electronic structure calculations have predicted, and will pave the way for future experimental studies on these promising materials.