Transparent, conductive bulk GaN by high temperature ammonothermal growth

Transparent, conductive bulk GaN by high temperature ammonothermal growth

A novel, highly scalable apparatus has been employed to perform high temperature ammonothermal growth of (0001) GaN bulk crystals up to 52 mm in diameter and to a thickness of greater than 2 mm. X‐ray characterization of the crystals shows excellent crystallinity with radii of curvature > 20 m an...

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Veröffentlicht in:Physica Status Solidi. B: Basic Solid State Physics 2015-05, Vol.252 (5), p.1069-1074
Hauptverfasser: Jiang, Wenkan, Ehrentraut, Dirk, Cook, Jonathan, Kamber, Derrick S., Pakalapati, Rajeev T., D'Evelyn, Mark P.
Format: Artikel
Sprache:eng
Schlagworte:
Absorption coefficient
ammonothermal growth
bulk crystals
Carrier density
Crystallinity
Crystals
doping
Gallium nitrides
GaN
Mathematical analysis
optical absorption
oxygen
Solid state physics
X-rays
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Beschreibung
Zusammenfassung:A novel, highly scalable apparatus has been employed to perform high temperature ammonothermal growth of (0001) GaN bulk crystals up to 52 mm in diameter and to a thickness of greater than 2 mm. X‐ray characterization of the crystals shows excellent crystallinity with radii of curvature > 20 m and a 201 rocking curve FWHM of
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201451587