Synthesis of amorphous hydrogenated carbon thin films by magnetized radio-frequency discharge in argon–acetylene mixture at very low gas pressure

This paper presents a characterization study of carbon thin films grown on crystalline silicon substrates using a magnetized high-frequency discharge in argon–acetylene mixture at very low pressure. Thin films with different morphological structure are obtained. Depending on the gas pressure, acetyl...

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Veröffentlicht in:Thin solid films 2016-01, Vol.599, p.84-97
Hauptverfasser: Hamdan, Ahmad, Al Makdessi, Georges, Margot, Joëlle
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper presents a characterization study of carbon thin films grown on crystalline silicon substrates using a magnetized high-frequency discharge in argon–acetylene mixture at very low pressure. Thin films with different morphological structure are obtained. Depending on the gas pressure, acetylene percentage and process time, it is possible to categorize the surface film morphology into three categories: smooth, cracked or microstructured. Moreover, when applying external magnetic field, it has been observed that depending on the substrate direction (perpendicular or parallel) to the reactor axis, it is possible to obtain different film morphologies. For specific conditions, energetic argon ions are formed which lead to film surface damaging and to their inclusion when they impinge the film surface. Chemical pathways and most likely isomers that contribute to the growth are also identified and discussed. Synthesizing materials in such low pressure conditions is of particular interest for better understanding the complex phenomena taking place in the plasma such as instabilities induced by particles and infra-red spectra of carbonaceous interstellar dust. •Deposition of amorphous hydrogenated carbon by magnetized RF-discharge•Modifying the film morphology by changing the pressure and the C2H2 percentage•Studying the effect of the magnetic field on the film structure
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2015.12.057