Paper Title: 27 kV, 20 A 4H-SiC n-IGBTs

In this work, we report our recently developed 27 kV, 20 A 4H-SiC n-IGBTs. Blocking voltages exceeding 24 kV were achieved by utilizing thick (210 mu m and 230 mu m), lightly doped N-drift layers with an appropriate edge termination. Prior to the device fabrication, an ambipolar carrier lifetime of greater than 10 mu s was measured on both drift regions by the microwave photoconductivity decay ( mu PCD) technique. The SiC n-IGBTs exhibit an on-state voltage of 11.8 V at a forward current of 20 A and a gate bias of 20 V at 25 [degrees]C. The devices have a chip size of 0.81 cm super(2) and an active conducting area of 0.28 cm super(2). Double-pulse switching measurements carried out at up to 16 kV and 20 A demonstrate the robust operation of the device under hard-switched conditions; coupled thermal analysis indicates that the devices can operate at a forward current of up to 10 A in a hard-switched environment at a frequency of more than 3 kHz and a bus voltage of 14 kV.