Recovery of PMOSFET NBTI under different conditions

Negative bias temperature instability（NBTI） has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal–oxide–semiconducto...

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Veröffentlicht in:	Chinese physics B 2015-09, Vol.24 (9), p.484-488
1. Verfasser:	曹艳荣杨毅曹成何文龙郑雪峰马晓华郝跃
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Field effect transistors Instability NBTI Niobium base alloys Oxides Recovery Semiconductor devices Stability 不稳定性可靠性问题器件氧化物电荷负偏压温度金属氧化物半导体场效应晶体管降解过程
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Beschreibung
Zusammenfassung:	Negative bias temperature instability（NBTI） has become a serious reliability issue, and the interface traps and oxide charges play an important role in the degradation process. In this paper, we study the recovery of NBTI systemically under different conditions in the P-type metal–oxide–semiconductor field effect transistor（PMOSFET）, explain the various recovery phenomena, and find the possible processes of the recovery.
ISSN:	1674-1056 2058-3834 1741-4199
DOI:	10.1088/1674-1056/24/9/097304