Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers
This work reports on description and application of a new Photoluminescence (PL) Imaging technique for in-grown stacking fault (SF) characterization and identification on 4H-SiC epilayers. The purpose of this technique is to make a spectroscopic picture from a collection of PL imaging picture taken...
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Veröffentlicht in: | Materials science forum 2015-06, Vol.821-823, p.323-326 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This work reports on description and application of a new Photoluminescence (PL) Imaging technique for in-grown stacking fault (SF) characterization and identification on 4H-SiC epilayers. The purpose of this technique is to make a spectroscopic picture from a collection of PL imaging picture taken at different output wavelengths in order to both display the shape and an approximation of the maximum PL intensity wavelength at room temperature (RT) of the characterized SF. This is why we called this technique “PL Imaging Spectroscopy”. Five types of SFs have been observed and compared to PL spectra collected at RT and 10K. |
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ISSN: | 0255-5476 1662-9752 1662-9752 |
DOI: | 10.4028/www.scientific.net/MSF.821-823.323 |