Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC
The guidelines necessary to improve the n-type doping uniformity on C-face epitaxial growth of 4H-SiC have been examined as far as the practical throughput is maintained, e.g. 3×150 mm wafers with the growth rate higher than 20 μm/h. The flow-channel enlargement was carried out and the effect was es...
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Veröffentlicht in: | Materials science forum 2015-06, Vol.821-823, p.169-172 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The guidelines necessary to improve the n-type doping uniformity on C-face epitaxial growth of 4H-SiC have been examined as far as the practical throughput is maintained, e.g. 3×150 mm wafers with the growth rate higher than 20 μm/h. The flow-channel enlargement was carried out and the effect was estimated by temperature distribution estimation performed by hydrogen etching. Also, effective C/Si was simulated with the temperature distribution obtained from the hydrogen etching experiments. As a result, positional agreement was found between the region where carrier concentration begins to increase and the drastic drop in temperature and the effective C/Si ratio. |
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ISSN: | 0255-5476 1662-9752 1662-9752 |
DOI: | 10.4028/www.scientific.net/MSF.821-823.169 |