Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers

We have investigated the effect of thermal oxidation on stacking faults (SFs) in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation and that SFs were formed on both sides of the comb-shaped dislocation array by a laser ir...

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Veröffentlicht in:	Materials science forum 2015-06, Vol.821-823, p.327-330
Hauptverfasser:	Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki, Miyano, Yutaro
Format:	Artikel
Sprache:	eng
Schlagworte:	Dislocations Faults Irradiation Laser arrays Lasers Oxidation Photoluminescence Stacking faults
Online-Zugang:	Volltext
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