Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers

We have investigated the effect of thermal oxidation on stacking faults (SFs) in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation and that SFs were formed on both sides of the comb-shaped dislocation array by a laser ir...

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Veröffentlicht in:Materials science forum 2015-06, Vol.821-823, p.327-330
Hauptverfasser: Yagi, Shuhei, Hijikata, Yasuto, Yaguchi, Hiroyuki, Miyano, Yutaro
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Sprache:eng
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Zusammenfassung:We have investigated the effect of thermal oxidation on stacking faults (SFs) in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped dislocation array was deformed by thermal oxidation and that SFs were formed on both sides of the comb-shaped dislocation array by a laser irradiation. Transmission electron microscopy has been performed in the comb-shaped dislocation array to observe the stacking pattern of SF near the dislocation. As a result, the SF turned out to be a single Shockley SF (1SSF). We also found that line-shaped faults perpendicular to the off-cut direction were formed during oxidation and were stretched with oxidation time. Moreover, triangle-shaped SFs were formed/expanded from the line-shaped faults by a laser irradiation. The characteristics of these line-shaped faults were discussed.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.821-823.327