Deposition of silica protected luminescent layers of Eu:GdVO4 nanoparticles assisted by atmospheric pressure plasma jet
Eu:GdVO4 nanophosphors with an average size of 60nm, synthesized by a facile solvothermal method, were deposited on monocrystalline silicon wafers by a spray-coating technique with artworks anti-counterfeiting applications in mind. Atmospheric pressure plasma jet (APPJ) was used to deposit a silica-...
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Veröffentlicht in: | Thin solid films 2016-01, Vol.598, p.88-94 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Eu:GdVO4 nanophosphors with an average size of 60nm, synthesized by a facile solvothermal method, were deposited on monocrystalline silicon wafers by a spray-coating technique with artworks anti-counterfeiting applications in mind. Atmospheric pressure plasma jet (APPJ) was used to deposit a silica-based layer on top of the nanometric luminescent layer, in order to improve its adhesion to the substrate and to protect it from the environment. The nanophosphors were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Coating composition was investigated by Fourier transform infrared spectroscopy (FT-IR) and its morphology was characterized by scanning electron microscopy (FEG-SEM). The film thickness was evaluated by means of ellipsometry and adhesion was estimated by a peeling test. Luminescent properties of the nanophosphors deposited and fixed on silicon wafers were also measured. The whole layer resulted well-adhered to the silicon substrate, transparent and undetectable in the presence of visible light, but easily activated by UV light source.
•Luminescent films were obtained by spray deposition of Eu:GdVO4 nanophosphors.•Plasma jet deposition of SiO2 fixed the nanophosphors on the substrate.•Optical properties of nanophosphors were preserved after deposition-fixing process.•Films well-adhered to the substrate, even after a scotch tape peeling test and a scratch test. |
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ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2015.11.061 |