Study and Modeling of the Impact of TID on the ATREE Response in LM124 Operational Amplifier

Study and Modeling of the Impact of TID on the ATREE Response in LM124 Operational Amplifier

Shapes of ATREEs (Analog Transient Radiation Effects on Electronics) in a bipolar integrated circuit change with exposure to Total Ionizing Dose (TID) radiation. The impact of TID on ATREEs is investigated in the LM124 operational amplifier (opamp) from three different manufacturers. Significant var...

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Veröffentlicht in:IEEE transactions on nuclear science 2014-08, Vol.61 (4), p.1603-1610
Hauptverfasser: Roig, Fabien, Dusseau, L., Ribeiro, P., Auriel, G., Roche, N. J.-H, Privat, A., Vaillé, J.-R, Boch, J., Saigné, F., Marec, R., Calvel, P., Bezerra, F., Ecoffet, R., Azais, B.
Format: Artikel
Sprache:eng
Schlagworte:
Amplifiers
Bipolar analog integrated circuits
Bipolar transistors
circuit modeling
Computer simulation
Devices
Electronics
Engineering Sciences
Integrated circuit modeling
ionizing dose
Lasers
Operational amplifiers
Performance evaluation
Radiation effects
Sensitivity
single event transient
Transient analysis
transient radiation effects
transient response
Transistors
X-ray effects
X-rays
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Zusammenfassung:Shapes of ATREEs (Analog Transient Radiation Effects on Electronics) in a bipolar integrated circuit change with exposure to Total Ionizing Dose (TID) radiation. The impact of TID on ATREEs is investigated in the LM124 operational amplifier (opamp) from three different manufacturers. Significant variations are observed on the ATREE responsesfrom different manufacturers. The ATREEs are produced by pulsed X-ray experiments. ASET laser mappings are performed to highlight the sensitive bipolar transistors, explaining the ATREE phenomena variations from one manufacturer to another one. ATREE modeling results are presented using a previously developed simulation tool. A good agreement is observed between experimental ATREE responses and model outputs whatever the TID level, the prompt dose level, the amplifier configuration and the device manufacturer.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2014.2306211