3D Radiation Detectors: Charge Collection Characterisation and Applicability of Technology for Microdosimetry
A study of charge collection in SINTEF 3D active edge silicon detectors was carried out at ANSTO using Ion Beam Induced Charge (IBIC) technique. An IBIC study has shown that several different geometries of 3D detectors have full depletion under low applied bias. The effect of fast neutron and gamma...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2014-08, Vol.61 (4), p.1537-1543 |
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| container_title | IEEE transactions on nuclear science |
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| creator | Tran, Linh T. Prokopovich, Dale A. Petasecca, Marco Lerch, Michael L. F. Kok, Angela Summanwar, Anand Hansen, Thor-Erik Da Via, Cinzia Reinhard, Mark I. Rosenfeld, Anatoly B. |
| description | A study of charge collection in SINTEF 3D active edge silicon detectors was carried out at ANSTO using Ion Beam Induced Charge (IBIC) technique. An IBIC study has shown that several different geometries of 3D detectors have full depletion under low applied bias. The effect of fast neutron and gamma radiation on their charge collection efficiency was also investigated. A 3D active edge silicon detector technology has demonstrated extremely promising performance for application of the 3D Sensitive Volumes (SVs) fabrication methods to SOI microdosimetry. |
| doi_str_mv | 10.1109/TNS.2014.2301729 |
| format | Article |
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A 3D active edge silicon detector technology has demonstrated extremely promising performance for application of the 3D Sensitive Volumes (SVs) fabrication methods to SOI microdosimetry.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2014.2301729</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>3D detector ; Charge ; charge collection ; Collection ; Current carriers ; Detectors ; Electrodes ; Fabrication ; Fast neutrons ; IBIC ; Image edge detection ; Microdosimeters ; microdosimetry ; Neutrons ; radiation damage ; Silicon ; Three dimensional ; Three-dimensional displays</subject><ispartof>IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1537-1543</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Aug 2014</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c483t-baedf6d401158e6321d990b5f09df0def5c9160ffb7105e2dc097ddd114f62893</citedby><cites>FETCH-LOGICAL-c483t-baedf6d401158e6321d990b5f09df0def5c9160ffb7105e2dc097ddd114f62893</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6759760$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6759760$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Tran, Linh T.</creatorcontrib><creatorcontrib>Prokopovich, Dale A.</creatorcontrib><creatorcontrib>Petasecca, Marco</creatorcontrib><creatorcontrib>Lerch, Michael L. 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A 3D active edge silicon detector technology has demonstrated extremely promising performance for application of the 3D Sensitive Volumes (SVs) fabrication methods to SOI microdosimetry.</description><subject>3D detector</subject><subject>Charge</subject><subject>charge collection</subject><subject>Collection</subject><subject>Current carriers</subject><subject>Detectors</subject><subject>Electrodes</subject><subject>Fabrication</subject><subject>Fast neutrons</subject><subject>IBIC</subject><subject>Image edge detection</subject><subject>Microdosimeters</subject><subject>microdosimetry</subject><subject>Neutrons</subject><subject>radiation damage</subject><subject>Silicon</subject><subject>Three dimensional</subject><subject>Three-dimensional displays</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkD1vGzEMQIUiBeqk3Qt0EdAly7nknXQ6dQuc9ANIW6B1Z0GWqETB-eRI58H_PjIcZMhEkHwkyMfYR4QlIugv69__li2gWLYdoGr1G7ZAKYcGpRrO2AIAh0YLrd-x81IeaiokyAXbdtf8r_XRzjFN_JpmcnPK5Stf3dt8R3yVxrGWjs1jxbqZciwn2k6eX-12Y3R2E8c4H3gKfE3ufkpjujvwkDL_FV1OPpW4pTkf3rO3wY6FPjzHC_b_28169aO5_fP95-rqtnFi6OZmY8mH3gtAlAP1XYtea9jIANoH8BSk09hDCBuFIKn1DrTy3iOK0LeD7i7Y5WnvLqfHPZXZbGNxNI52orQvBtXQtyiEwop-foU-pH2e6nWm-hMCO4WqUnCi6jelZApml-PW5oNBMEf_pvo3R__m2X8d-XQaiUT0gvdKatVD9wSnzoIT</recordid><startdate>20140801</startdate><enddate>20140801</enddate><creator>Tran, Linh T.</creator><creator>Prokopovich, Dale A.</creator><creator>Petasecca, Marco</creator><creator>Lerch, Michael L. 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| subjects | 3D detector Charge charge collection Collection Current carriers Detectors Electrodes Fabrication Fast neutrons IBIC Image edge detection Microdosimeters microdosimetry Neutrons radiation damage Silicon Three dimensional Three-dimensional displays |
| title | 3D Radiation Detectors: Charge Collection Characterisation and Applicability of Technology for Microdosimetry |
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