3D Radiation Detectors: Charge Collection Characterisation and Applicability of Technology for Microdosimetry

3D Radiation Detectors: Charge Collection Characterisation and Applicability of Technology for Microdosimetry

A study of charge collection in SINTEF 3D active edge silicon detectors was carried out at ANSTO using Ion Beam Induced Charge (IBIC) technique. An IBIC study has shown that several different geometries of 3D detectors have full depletion under low applied bias. The effect of fast neutron and gamma...

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Veröffentlicht in:IEEE transactions on nuclear science 2014-08, Vol.61 (4), p.1537-1543
Hauptverfasser: Tran, Linh T., Prokopovich, Dale A., Petasecca, Marco, Lerch, Michael L. F., Kok, Angela, Summanwar, Anand, Hansen, Thor-Erik, Da Via, Cinzia, Reinhard, Mark I., Rosenfeld, Anatoly B.
Format: Artikel
Sprache:eng
Schlagworte:
3D detector
Charge
charge collection
Collection
Current carriers
Detectors
Electrodes
Fabrication
Fast neutrons
IBIC
Image edge detection
Microdosimeters
microdosimetry
Neutrons
radiation damage
Silicon
Three dimensional
Three-dimensional displays
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Zusammenfassung:A study of charge collection in SINTEF 3D active edge silicon detectors was carried out at ANSTO using Ion Beam Induced Charge (IBIC) technique. An IBIC study has shown that several different geometries of 3D detectors have full depletion under low applied bias. The effect of fast neutron and gamma radiation on their charge collection efficiency was also investigated. A 3D active edge silicon detector technology has demonstrated extremely promising performance for application of the 3D Sensitive Volumes (SVs) fabrication methods to SOI microdosimetry.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2014.2301729