Persistence of a two-dimensional topological insulator state in wide HgTe quantum wells

Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm the persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison of local and nonlocal resistance measurements indicate e...

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Veröffentlicht in:Physical review letters 2015-03, Vol.114 (12), p.126802-126802, Article 126802
Hauptverfasser: Olshanetsky, E B, Kvon, Z D, Gusev, G M, Levin, A D, Raichev, O E, Mikhailov, N N, Dvoretsky, S A
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Sprache:eng
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Zusammenfassung:Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm the persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison of local and nonlocal resistance measurements indicate edge state transport in the samples of about 1 mm size at temperatures below 1 K. Temperature dependence of the resistances suggests an insulating gap of the order of a few meV. In samples with sizes smaller than 10  μm a quasiballistic transport via the edge states is observed.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.114.126802