Radial oxygen precipitation of a 12" CZ silicon crystal studied in-situ with high energy X-ray diffraction

The radial oxygen nucleation and precipitation in Czochralski‐grown silicon crystals is observed in real time via the local evolution of the X‐ray Bragg intensity. Using a high X‐ray energy and a divergent beam setup, it becomes possible to examine the impact of the local as‐grown point defect configuration on the formation of bulk micro defects in a crystal of macroscopic dimensions. As a salient feature the transition from vacancy‐ to interstitial‐dominated regions in a 12” crystal can be identified, and its influence on the precipitation kinetics is quantified through effective oxygen diffusion constant. It appears enhanced by up to a factor of six in vacancy‐rich regions as compared to crystal volumes which are identified as point‐defect free where it agrees well with the literature value.