Near room-temperature triethylamine sensor constructed with CuO/ZnO P-N heterostructural nanorods directly on flat electrode
•Nanostructured triethylamine gas sensor with high response can work at near room temperature.•The CuO/ZnO nanorod P-N heterostructure were directly grown on flat Al2O3 substrate.•The depletion layer formed at the CuO/ZnO interface enhanced the sensor performance. Metal oxide-based chemiresistive ga...
Gespeichert in:
Veröffentlicht in: | Sensors and actuators. B, Chemical Chemical, 2016-03, Vol.225, p.16-23 |
---|---|
Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | •Nanostructured triethylamine gas sensor with high response can work at near room temperature.•The CuO/ZnO nanorod P-N heterostructure were directly grown on flat Al2O3 substrate.•The depletion layer formed at the CuO/ZnO interface enhanced the sensor performance.
Metal oxide-based chemiresistive gas sensors working at room temperature with high sensitivity for specific gas have been expected for many applications. Here, a near room-temperature and high-response triethylamine (TEA) gas sensor has been successfully fabricated by designing CuO/ZnO P-N heterostructure. By introducing a seed layer, ZnO nanorods directly grew on flat Al2O3 substrate with a facile and cost-effective hydrothermal method. Then, CuO nanoparticles were loaded onto the surface of ZnO nanorods to form P-N heterostructures via a simple wet-chemical method. The CuO-nanoparticles/ZnO-nanorods heterostructure exhibits higher response to 50ppm TEA gas than that of pristine ZnO nanorods even at working temperature as low as 40°C, owing to the formation of P-N heterojunction. The enhanced gas-sensing properties of CuO/ZnO sensor were discussed with a CuO/ZnO P-N heterojunction model in terms of depletion layer and modulation of potential barrier height. |
---|---|
ISSN: | 0925-4005 1873-3077 |
DOI: | 10.1016/j.snb.2015.10.108 |