Advanced process for n-type mono-like silicon a-Si:H/c-Si heterojunction solar cells with 21.5% efficiency
In this work, n-type a-Si:H/c-Si heterojunction solar cells were fabricated using mono-like silicon wafers. First, cell efficiency distribution was investigated along a complete mono-like silicon ingot. Advanced electrical characterization was performed in order to understand limiting mechanisms of...
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| Veröffentlicht in: | Solar energy materials and solar cells 2014-11, Vol.130, p.690-695 |
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| container_title | Solar energy materials and solar cells |
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| creator | Jay, F. Muñoz, D. Desrues, T. Pihan, E. Amaral de Oliveira, V. Enjalbert, N. Jouini, A. |
| description | In this work, n-type a-Si:H/c-Si heterojunction solar cells were fabricated using mono-like silicon wafers. First, cell efficiency distribution was investigated along a complete mono-like silicon ingot. Advanced electrical characterization was performed in order to understand limiting mechanisms of the final device performances. Fabricated heterojunction cells with the standard industrial compatible process have demonstrated efficiencies comparable to those with our Czochralski grown monocrystalline substrates: over 19% along a large part of the ingot. Moreover, the best wafers were evaluated using our advanced cells process. Very high efficiencies over 21.5% have been obtained, demonstrating the potential of such substrates for very high efficiency solar cells.
•Heterojunction silicon solar cells have been fabricated on mono-like silicon wafers.•Mono-like silicon ingot has been studied all along its height.•We performed advanced electrical characterizations on mono-like silicon.•We obtained high efficiency with an advanced solar cell process. |
| doi_str_mv | 10.1016/j.solmat.2014.02.025 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1786165970</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0927024814001068</els_id><sourcerecordid>1786165970</sourcerecordid><originalsourceid>FETCH-LOGICAL-c472t-15831c57a13d7e83d07f9d8710e47dff8f57bf29c321e7404c8d1f75b6fbd52a3</originalsourceid><addsrcrecordid>eNqNkU1rGzEQhkVpoG6Sf9CDLoFedq3PlbaHQghpEgjkkOQsZGmEtV2vXGmd4H9fOQ49lsDAHOaZr_dF6BslLSW0Ww5tSePGzi0jVLSE1ZCf0IJq1Tec9_ozWpCeqYYwob-gr6UMhBDWcbFAw6V_sZMDj7c5OSgFh5Tx1Mz7LeBNmlIzxt-ASxyjSxO2zWP8cbt0NeE1zJDTsJvcHGupnmAzdjCOBb_GeY0ZbeUFhhCiizC5_Rk6CXYscP6eT9Hzr-unq9vm_uHm7uryvnFCsbmhUnPqpLKUewWae6JC77WiBITyIegg1Sqw3nFGQQkinPY0KLnqwspLZvkp-n6cWz_6s4Mym00sh7vsBGlXDFW6o53sFfkA2jEutWa0ouKIupxKyRDMNseNzXtDiTm4YAZzdMEcXDCE1ZC17eJ9gy3OjiFXsWP518u0llr0B-7nkYOqzEuEbMqbauBjBjcbn-L_F_0FCHaefw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1762358821</pqid></control><display><type>article</type><title>Advanced process for n-type mono-like silicon a-Si:H/c-Si heterojunction solar cells with 21.5% efficiency</title><source>Elsevier ScienceDirect Journals</source><creator>Jay, F. ; Muñoz, D. ; Desrues, T. ; Pihan, E. ; Amaral de Oliveira, V. ; Enjalbert, N. ; Jouini, A.</creator><creatorcontrib>Jay, F. ; Muñoz, D. ; Desrues, T. ; Pihan, E. ; Amaral de Oliveira, V. ; Enjalbert, N. ; Jouini, A.</creatorcontrib><description>In this work, n-type a-Si:H/c-Si heterojunction solar cells were fabricated using mono-like silicon wafers. First, cell efficiency distribution was investigated along a complete mono-like silicon ingot. Advanced electrical characterization was performed in order to understand limiting mechanisms of the final device performances. Fabricated heterojunction cells with the standard industrial compatible process have demonstrated efficiencies comparable to those with our Czochralski grown monocrystalline substrates: over 19% along a large part of the ingot. Moreover, the best wafers were evaluated using our advanced cells process. Very high efficiencies over 21.5% have been obtained, demonstrating the potential of such substrates for very high efficiency solar cells.
•Heterojunction silicon solar cells have been fabricated on mono-like silicon wafers.•Mono-like silicon ingot has been studied all along its height.•We performed advanced electrical characterizations on mono-like silicon.•We obtained high efficiency with an advanced solar cell process.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/j.solmat.2014.02.025</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Constraining ; Direct energy conversion and energy accumulation ; Electrical engineering. Electrical power engineering ; Electrical power engineering ; Electrical properties ; Energy ; Exact sciences and technology ; Heterojunction silicon solar cell ; Heterojunctions ; High efficiency ; Ingots ; Mono-cast Si ; Mono-like Si ; Natural energy ; Photoelectric conversion ; Photovoltaic cells ; Photovoltaic conversion ; Quasi-mono Si ; Silicon ; Solar cells ; Solar cells. Photoelectrochemical cells ; Solar energy ; Wafers</subject><ispartof>Solar energy materials and solar cells, 2014-11, Vol.130, p.690-695</ispartof><rights>2014 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c472t-15831c57a13d7e83d07f9d8710e47dff8f57bf29c321e7404c8d1f75b6fbd52a3</citedby><cites>FETCH-LOGICAL-c472t-15831c57a13d7e83d07f9d8710e47dff8f57bf29c321e7404c8d1f75b6fbd52a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.solmat.2014.02.025$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,777,781,786,787,3537,23911,23912,25121,27905,27906,45976</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28858495$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jay, F.</creatorcontrib><creatorcontrib>Muñoz, D.</creatorcontrib><creatorcontrib>Desrues, T.</creatorcontrib><creatorcontrib>Pihan, E.</creatorcontrib><creatorcontrib>Amaral de Oliveira, V.</creatorcontrib><creatorcontrib>Enjalbert, N.</creatorcontrib><creatorcontrib>Jouini, A.</creatorcontrib><title>Advanced process for n-type mono-like silicon a-Si:H/c-Si heterojunction solar cells with 21.5% efficiency</title><title>Solar energy materials and solar cells</title><description>In this work, n-type a-Si:H/c-Si heterojunction solar cells were fabricated using mono-like silicon wafers. First, cell efficiency distribution was investigated along a complete mono-like silicon ingot. Advanced electrical characterization was performed in order to understand limiting mechanisms of the final device performances. Fabricated heterojunction cells with the standard industrial compatible process have demonstrated efficiencies comparable to those with our Czochralski grown monocrystalline substrates: over 19% along a large part of the ingot. Moreover, the best wafers were evaluated using our advanced cells process. Very high efficiencies over 21.5% have been obtained, demonstrating the potential of such substrates for very high efficiency solar cells.
•Heterojunction silicon solar cells have been fabricated on mono-like silicon wafers.•Mono-like silicon ingot has been studied all along its height.•We performed advanced electrical characterizations on mono-like silicon.•We obtained high efficiency with an advanced solar cell process.</description><subject>Applied sciences</subject><subject>Constraining</subject><subject>Direct energy conversion and energy accumulation</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electrical power engineering</subject><subject>Electrical properties</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Heterojunction silicon solar cell</subject><subject>Heterojunctions</subject><subject>High efficiency</subject><subject>Ingots</subject><subject>Mono-cast Si</subject><subject>Mono-like Si</subject><subject>Natural energy</subject><subject>Photoelectric conversion</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic conversion</subject><subject>Quasi-mono Si</subject><subject>Silicon</subject><subject>Solar cells</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Wafers</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqNkU1rGzEQhkVpoG6Sf9CDLoFedq3PlbaHQghpEgjkkOQsZGmEtV2vXGmd4H9fOQ49lsDAHOaZr_dF6BslLSW0Ww5tSePGzi0jVLSE1ZCf0IJq1Tec9_ozWpCeqYYwob-gr6UMhBDWcbFAw6V_sZMDj7c5OSgFh5Tx1Mz7LeBNmlIzxt-ASxyjSxO2zWP8cbt0NeE1zJDTsJvcHGupnmAzdjCOBb_GeY0ZbeUFhhCiizC5_Rk6CXYscP6eT9Hzr-unq9vm_uHm7uryvnFCsbmhUnPqpLKUewWae6JC77WiBITyIegg1Sqw3nFGQQkinPY0KLnqwspLZvkp-n6cWz_6s4Mym00sh7vsBGlXDFW6o53sFfkA2jEutWa0ouKIupxKyRDMNseNzXtDiTm4YAZzdMEcXDCE1ZC17eJ9gy3OjiFXsWP518u0llr0B-7nkYOqzEuEbMqbauBjBjcbn-L_F_0FCHaefw</recordid><startdate>20141101</startdate><enddate>20141101</enddate><creator>Jay, F.</creator><creator>Muñoz, D.</creator><creator>Desrues, T.</creator><creator>Pihan, E.</creator><creator>Amaral de Oliveira, V.</creator><creator>Enjalbert, N.</creator><creator>Jouini, A.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7TG</scope><scope>KL.</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20141101</creationdate><title>Advanced process for n-type mono-like silicon a-Si:H/c-Si heterojunction solar cells with 21.5% efficiency</title><author>Jay, F. ; Muñoz, D. ; Desrues, T. ; Pihan, E. ; Amaral de Oliveira, V. ; Enjalbert, N. ; Jouini, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c472t-15831c57a13d7e83d07f9d8710e47dff8f57bf29c321e7404c8d1f75b6fbd52a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied sciences</topic><topic>Constraining</topic><topic>Direct energy conversion and energy accumulation</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electrical power engineering</topic><topic>Electrical properties</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Heterojunction silicon solar cell</topic><topic>Heterojunctions</topic><topic>High efficiency</topic><topic>Ingots</topic><topic>Mono-cast Si</topic><topic>Mono-like Si</topic><topic>Natural energy</topic><topic>Photoelectric conversion</topic><topic>Photovoltaic cells</topic><topic>Photovoltaic conversion</topic><topic>Quasi-mono Si</topic><topic>Silicon</topic><topic>Solar cells</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Wafers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jay, F.</creatorcontrib><creatorcontrib>Muñoz, D.</creatorcontrib><creatorcontrib>Desrues, T.</creatorcontrib><creatorcontrib>Pihan, E.</creatorcontrib><creatorcontrib>Amaral de Oliveira, V.</creatorcontrib><creatorcontrib>Enjalbert, N.</creatorcontrib><creatorcontrib>Jouini, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Meteorological & Geoastrophysical Abstracts</collection><collection>Meteorological & Geoastrophysical Abstracts - Academic</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jay, F.</au><au>Muñoz, D.</au><au>Desrues, T.</au><au>Pihan, E.</au><au>Amaral de Oliveira, V.</au><au>Enjalbert, N.</au><au>Jouini, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Advanced process for n-type mono-like silicon a-Si:H/c-Si heterojunction solar cells with 21.5% efficiency</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2014-11-01</date><risdate>2014</risdate><volume>130</volume><spage>690</spage><epage>695</epage><pages>690-695</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>In this work, n-type a-Si:H/c-Si heterojunction solar cells were fabricated using mono-like silicon wafers. First, cell efficiency distribution was investigated along a complete mono-like silicon ingot. Advanced electrical characterization was performed in order to understand limiting mechanisms of the final device performances. Fabricated heterojunction cells with the standard industrial compatible process have demonstrated efficiencies comparable to those with our Czochralski grown monocrystalline substrates: over 19% along a large part of the ingot. Moreover, the best wafers were evaluated using our advanced cells process. Very high efficiencies over 21.5% have been obtained, demonstrating the potential of such substrates for very high efficiency solar cells.
•Heterojunction silicon solar cells have been fabricated on mono-like silicon wafers.•Mono-like silicon ingot has been studied all along its height.•We performed advanced electrical characterizations on mono-like silicon.•We obtained high efficiency with an advanced solar cell process.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.solmat.2014.02.025</doi><tpages>6</tpages></addata></record> |
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| ispartof | Solar energy materials and solar cells, 2014-11, Vol.130, p.690-695 |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Constraining Direct energy conversion and energy accumulation Electrical engineering. Electrical power engineering Electrical power engineering Electrical properties Energy Exact sciences and technology Heterojunction silicon solar cell Heterojunctions High efficiency Ingots Mono-cast Si Mono-like Si Natural energy Photoelectric conversion Photovoltaic cells Photovoltaic conversion Quasi-mono Si Silicon Solar cells Solar cells. Photoelectrochemical cells Solar energy Wafers |
| title | Advanced process for n-type mono-like silicon a-Si:H/c-Si heterojunction solar cells with 21.5% efficiency |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T14%3A54%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Advanced%20process%20for%20n-type%20mono-like%20silicon%20a-Si:H/c-Si%20heterojunction%20solar%20cells%20with%2021.5%25%20efficiency&rft.jtitle=Solar%20energy%20materials%20and%20solar%20cells&rft.au=Jay,%20F.&rft.date=2014-11-01&rft.volume=130&rft.spage=690&rft.epage=695&rft.pages=690-695&rft.issn=0927-0248&rft.eissn=1879-3398&rft_id=info:doi/10.1016/j.solmat.2014.02.025&rft_dat=%3Cproquest_cross%3E1786165970%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1762358821&rft_id=info:pmid/&rft_els_id=S0927024814001068&rfr_iscdi=true |