Advanced process for n-type mono-like silicon a-Si:H/c-Si heterojunction solar cells with 21.5% efficiency

In this work, n-type a-Si:H/c-Si heterojunction solar cells were fabricated using mono-like silicon wafers. First, cell efficiency distribution was investigated along a complete mono-like silicon ingot. Advanced electrical characterization was performed in order to understand limiting mechanisms of the final device performances. Fabricated heterojunction cells with the standard industrial compatible process have demonstrated efficiencies comparable to those with our Czochralski grown monocrystalline substrates: over 19% along a large part of the ingot. Moreover, the best wafers were evaluated using our advanced cells process. Very high efficiencies over 21.5% have been obtained, demonstrating the potential of such substrates for very high efficiency solar cells. •Heterojunction silicon solar cells have been fabricated on mono-like silicon wafers.•Mono-like silicon ingot has been studied all along its height.•We performed advanced electrical characterizations on mono-like silicon.•We obtained high efficiency with an advanced solar cell process.