Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells

Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich...

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Veröffentlicht in:Physical review letters 2015-07, Vol.115 (3), p.036803-036803, Article 036803
Hauptverfasser: Qu, Fanming, Beukman, Arjan J A, Nadj-Perge, Stevan, Wimmer, Michael, Nguyen, Binh-Minh, Yi, Wei, Thorp, Jacob, Sokolich, Marko, Kiselev, Andrey A, Manfra, Michael J, Marcus, Charles M, Kouwenhoven, Leo P
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Sprache:eng
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Zusammenfassung:Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.115.036803