Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag Schottky diodes: a comparative study
Schottky junctions are constructed by depositing PANI-ZnS and PANI-CdS nanocomposite thin films on ITO electrodes. Current–voltage ( I – V ) measurements of these systems are performed as a function of temperature in the range of 313–363 K. These junctions show Schottky diode nature. Various paramet...
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| Veröffentlicht in: | Indian journal of physics 2016, Vol.90 (1), p.29-34 |
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| creator | Dey, S. K. Baglari, S. Sarkar, D. |
| description | Schottky junctions are constructed by depositing PANI-ZnS and PANI-CdS nanocomposite thin films on ITO electrodes. Current–voltage (
I
–
V
) measurements of these systems are performed as a function of temperature in the range of 313–363 K. These junctions show Schottky diode nature. Various parameters, such as saturation current (
I
0
), ideality factor (
n
), barrier height (
∅
0
) and series resistance (
R
S
), are calculated from diode characteristics relations. These parameters show strong temperature dependence. The values of
I
0
and
∅
increase with increasing temperature, whereas the values of
n
and
R
S
show decreasing trend. A Richardson plot of the data shows nonlinear behaviour with Richardson constant ~76 and 45 A cm
−2
K
−2
for PANI-ZnS and PANI-CdS nanocomposite thin films, respectively. |
| doi_str_mv | 10.1007/s12648-015-0723-7 |
| format | Article |
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I
–
V
) measurements of these systems are performed as a function of temperature in the range of 313–363 K. These junctions show Schottky diode nature. Various parameters, such as saturation current (
I
0
), ideality factor (
n
), barrier height (
∅
0
) and series resistance (
R
S
), are calculated from diode characteristics relations. These parameters show strong temperature dependence. The values of
I
0
and
∅
increase with increasing temperature, whereas the values of
n
and
R
S
show decreasing trend. A Richardson plot of the data shows nonlinear behaviour with Richardson constant ~76 and 45 A cm
−2
K
−2
for PANI-ZnS and PANI-CdS nanocomposite thin films, respectively.</description><identifier>ISSN: 0973-1458</identifier><identifier>EISSN: 0974-9845</identifier><identifier>DOI: 10.1007/s12648-015-0723-7</identifier><language>eng</language><publisher>New Delhi: Springer India</publisher><subject>Astrophysics and Astroparticles ; Comparative studies ; Constants ; Deposition ; Diodes ; Electrodes ; Nanocomposites ; Original Paper ; Physics ; Physics and Astronomy ; Schottky diodes ; Silver ; Thin films</subject><ispartof>Indian journal of physics, 2016, Vol.90 (1), p.29-34</ispartof><rights>Indian Association for the Cultivation of Science 2015</rights><rights>Indian Association for the Cultivation of Science 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-33502577eb4a45f116d6ba9080cd0219c8184bfebb963e20f366f293ed3db65f3</citedby><cites>FETCH-LOGICAL-c349t-33502577eb4a45f116d6ba9080cd0219c8184bfebb963e20f366f293ed3db65f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s12648-015-0723-7$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s12648-015-0723-7$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Dey, S. K.</creatorcontrib><creatorcontrib>Baglari, S.</creatorcontrib><creatorcontrib>Sarkar, D.</creatorcontrib><title>Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag Schottky diodes: a comparative study</title><title>Indian journal of physics</title><addtitle>Indian J Phys</addtitle><description>Schottky junctions are constructed by depositing PANI-ZnS and PANI-CdS nanocomposite thin films on ITO electrodes. Current–voltage (
I
–
V
) measurements of these systems are performed as a function of temperature in the range of 313–363 K. These junctions show Schottky diode nature. Various parameters, such as saturation current (
I
0
), ideality factor (
n
), barrier height (
∅
0
) and series resistance (
R
S
), are calculated from diode characteristics relations. These parameters show strong temperature dependence. The values of
I
0
and
∅
increase with increasing temperature, whereas the values of
n
and
R
S
show decreasing trend. A Richardson plot of the data shows nonlinear behaviour with Richardson constant ~76 and 45 A cm
−2
K
−2
for PANI-ZnS and PANI-CdS nanocomposite thin films, respectively.</description><subject>Astrophysics and Astroparticles</subject><subject>Comparative studies</subject><subject>Constants</subject><subject>Deposition</subject><subject>Diodes</subject><subject>Electrodes</subject><subject>Nanocomposites</subject><subject>Original Paper</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Schottky diodes</subject><subject>Silver</subject><subject>Thin films</subject><issn>0973-1458</issn><issn>0974-9845</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kE1LAzEURQdRsFZ_gLsBN25i852Ju1L8qBQVrBs3IZNk2qntpCYZof_e0REUwdV7PM69PE6WnSJ4gSAUo4gwpwWAiAEoMAFiLxtAKSiQBWX7XzsBiLLiMDuKcQUhl0iwQWbv2sak2je5WeqgTXKhjqk2MfdVPp0_jB7H91Pw0jyNxotcN_bnNrFftyez9Cm97nJbe-viZa5z4zfbrivV7y6PqbW74-yg0uvoTr7nMHu-vppPbsHs4WY6Gc-AIVQmQAiDmAnhSqopqxDilpdawgIaCzGSpkAFLStXlpITh2FFOK-wJM4SW3JWkWF23vdug39rXUxqU0fj1mvdON9GhUTBEcOywB169gdd-TY03XcdxQjGUFLeUainTPAxBlepbag3OuwUgurTu-q9q867-vSuRJfBfSZ2bLNw4Vfzv6EP6ZCC0Q</recordid><startdate>2016</startdate><enddate>2016</enddate><creator>Dey, S. K.</creator><creator>Baglari, S.</creator><creator>Sarkar, D.</creator><general>Springer India</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>04Q</scope><scope>04W</scope><scope>3V.</scope><scope>7U5</scope><scope>7XB</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>M2O</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope></search><sort><creationdate>2016</creationdate><title>Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag Schottky diodes: a comparative study</title><author>Dey, S. K. ; Baglari, S. ; Sarkar, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-33502577eb4a45f116d6ba9080cd0219c8184bfebb963e20f366f293ed3db65f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Astrophysics and Astroparticles</topic><topic>Comparative studies</topic><topic>Constants</topic><topic>Deposition</topic><topic>Diodes</topic><topic>Electrodes</topic><topic>Nanocomposites</topic><topic>Original Paper</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Schottky diodes</topic><topic>Silver</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dey, S. K.</creatorcontrib><creatorcontrib>Baglari, S.</creatorcontrib><creatorcontrib>Sarkar, D.</creatorcontrib><collection>CrossRef</collection><collection>India Database</collection><collection>India Database: Science & Technology</collection><collection>ProQuest Central (Corporate)</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Research Library</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>ProQuest Central Basic</collection><jtitle>Indian journal of physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dey, S. K.</au><au>Baglari, S.</au><au>Sarkar, D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag Schottky diodes: a comparative study</atitle><jtitle>Indian journal of physics</jtitle><stitle>Indian J Phys</stitle><date>2016</date><risdate>2016</risdate><volume>90</volume><issue>1</issue><spage>29</spage><epage>34</epage><pages>29-34</pages><issn>0973-1458</issn><eissn>0974-9845</eissn><abstract>Schottky junctions are constructed by depositing PANI-ZnS and PANI-CdS nanocomposite thin films on ITO electrodes. Current–voltage (
I
–
V
) measurements of these systems are performed as a function of temperature in the range of 313–363 K. These junctions show Schottky diode nature. Various parameters, such as saturation current (
I
0
), ideality factor (
n
), barrier height (
∅
0
) and series resistance (
R
S
), are calculated from diode characteristics relations. These parameters show strong temperature dependence. The values of
I
0
and
∅
increase with increasing temperature, whereas the values of
n
and
R
S
show decreasing trend. A Richardson plot of the data shows nonlinear behaviour with Richardson constant ~76 and 45 A cm
−2
K
−2
for PANI-ZnS and PANI-CdS nanocomposite thin films, respectively.</abstract><cop>New Delhi</cop><pub>Springer India</pub><doi>10.1007/s12648-015-0723-7</doi><tpages>6</tpages></addata></record> |
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| language | eng |
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| source | SpringerNature Journals |
| subjects | Astrophysics and Astroparticles Comparative studies Constants Deposition Diodes Electrodes Nanocomposites Original Paper Physics Physics and Astronomy Schottky diodes Silver Thin films |
| title | Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag Schottky diodes: a comparative study |
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