Junction characteristics of ITO/PANI-ZnS/Ag and ITO/PANI-CdS/Ag Schottky diodes: a comparative study

Schottky junctions are constructed by depositing PANI-ZnS and PANI-CdS nanocomposite thin films on ITO electrodes. Current–voltage ( I – V ) measurements of these systems are performed as a function of temperature in the range of 313–363 K. These junctions show Schottky diode nature. Various parameters, such as saturation current ( I 0 ), ideality factor ( n ), barrier height ( ∅ 0 ) and series resistance ( R S ), are calculated from diode characteristics relations. These parameters show strong temperature dependence. The values of I 0 and ∅ increase with increasing temperature, whereas the values of n and R S show decreasing trend. A Richardson plot of the data shows nonlinear behaviour with Richardson constant ~76 and 45 A cm −2 K −2 for PANI-ZnS and PANI-CdS nanocomposite thin films, respectively.