Structural properties of Si/SiO sub(2) nanostructures grown by decomposition of substoichiometric SiO sub(x)N sub(y) layers for photovoltaic applications

The structural properties of crystalline Si nanodots embedded in a SiO sub(2) matrix are investigated with respect to the exploitation of quantum confinement effects (QCE) in Si solar cells. The nanostructures are grown on crystalline Si (c-Si) wafers by decomposition of substoichiometric SiO sub(x)N sub(y) layers with various [O]/[Si] ratios. Cross-sectional high-resolution transmission electron microscopy investigations reveal the formation of separated single crystalline nanodots with diameters below 5nm inside the SiO sub(x)N sub(y) volume and directly on the c-Si wafer. The density and diameter of the nanodots decreases with increasing [O]/[Si] ratio, leading to inter-dot distances above 10nm for [O]/[Si]>1.3. Photoluminescence (PL) spectra are blue-shifted relative to the Si bulk PL, which is in good agreement with theoretical QCE models. It is found that for observing the PL signal the nanodots must be covered by a SiO sub(2) shell to reduce charge carrier recombination via defects at the nanodot surface. This requires an [O]/[Si] ratio >0.5 for which the inter-dot distance becomes too large for charge carrier transport between the nanodots. It is concluded that a better control over the nanodot formation at high [O]/[Si] ratios has to be achieved before QCE can be successfully applied in Si solar cell devices.