Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness

Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness

Ge/Si core/shell nanowires are fabricated with narrow (20 nm) Ge core and thin (2 nm) Si shell. Ge nanowires are prepared by vapor–liquid–solid (VLS) chemical vapor deposition (CVD). The low‐temperature (450 °C) process by using Si2H6 gas as a Si CVD source is essential to form ultrathin layer of ep...

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Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2015-07, Vol.212 (7), p.1578-1581
Hauptverfasser: Noguchi, Tomohiro, Morita, Koudai, Simanullang, Marolop, Xu, Zhengyu, Usami, Koichi, Kawano, Yukio, Kodera, Tetsuo, Oda, Shunri
Format: Artikel
Sprache:eng
Schlagworte:
Chemical vapor deposition
core/shell structures
Electrical measurement
Epitaxy
Germanium
Materials science
Nanowires
semiconductors
Silicon
Silicon films
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Zusammenfassung:Ge/Si core/shell nanowires are fabricated with narrow (20 nm) Ge core and thin (2 nm) Si shell. Ge nanowires are prepared by vapor–liquid–solid (VLS) chemical vapor deposition (CVD). The low‐temperature (450 °C) process by using Si2H6 gas as a Si CVD source is essential to form ultrathin layer of epitaxial Si film onto very narrow Ge nanowires. Accumulation of holes in Ge nanowires confined in the Si shell is confirmed by electrical measurement.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201532340