Efficiency Enhancement of Gallium Arsenide Photovoltaics Using Solution-Processed Zinc Oxide Nanoparticle Light Scattering Layers

Efficiency Enhancement of Gallium Arsenide Photovoltaics Using Solution-Processed Zinc Oxide Nanoparticle Light Scattering Layers

We demonstrate a high-throughput, solution-based process for subwavelength surface texturing of a III-V compound solar cell. A zinc oxide (ZnO) nanoparticle ink is spray-coated directly on top of a gallium arsenide (GaAs) solar cell. The nanostructured ZnO films have demonstrated antireflection and...

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Veröffentlicht in:Journal of nanomaterials 2015-01, Vol.2015 (2015), p.1-6
Hauptverfasser: Harris, James S., Christoforo, Mark G., Chen, Yusi, Huo, Yijie, Mehra, Saahil, Liang, Dong, Kang, Yangsen, Salleo, Alberto
Format: Artikel
Sprache:eng
Schlagworte:
Gallium arsenide
Light scattering
Nanomaterials
Nanostructure
Photovoltaic cells
Solar cells
Spectra
Texturing
Zinc oxide
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Zusammenfassung:We demonstrate a high-throughput, solution-based process for subwavelength surface texturing of a III-V compound solar cell. A zinc oxide (ZnO) nanoparticle ink is spray-coated directly on top of a gallium arsenide (GaAs) solar cell. The nanostructured ZnO films have demonstrated antireflection and light scattering properties over the visible/near-infrared (NIR) spectrum. The results show a broadband spectral enhancement of the solar cell external quantum efficiency (EQE), a 16% enhancement of short circuit current, and a 10% increase in photovoltaic efficiency.
ISSN:1687-4110
1687-4129
DOI:10.1155/2015/263734