Efficient improvement of photoelectrochemical performance of CdSe thin film deposited via arrested precipitation technique

Nanocrystalline CdSe thin films have been deposited by arrested precipitation technique (APT) and utilized as the photoanode for solar cell application. The effect of deposition time on photoelectrochemical (PEC) properties of CdSe thin films have been investigated. The optical band gap of CdSe thin films decreases with an increase in deposition time. CdSe crystallize in a cubic crystal structure with spherical particles having an almost uniform size and distributed all over the substrate surface. The presence of Cd and Se in the CdSe was confirmed by EDS spectrum. Based on the PEC properties, the improvement in conversion efficiency is observed with increase in deposition time. Maximum photoconversion efficiency recorded is 0.62%. [Display omitted] •Simple APT used for synthesis of CdSe thin films.•CdSe thin films exhibit cubic crystal structure.•The CdSe thin films are good candidate for solar cell.•Highest photoelectrochemical cell performance 0.62% was observed.