Silicon with binary elementary cells as a novel class of materials for future photoenergetics

We show the ability to extend the spectral sensitivity range of silicon photoelements due to the formation of nanoscale structures—quantum dots based on the Si 2 A n B 8– n binary elementary cells—both in the bulk and on the surface of the samples that is expected to allow the development of photoel...

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Veröffentlicht in:	Applied solar energy 2015-10, Vol.51 (4), p.258-261
Hauptverfasser:	Bakhadyrkhanov, M. K., Mavlyanov, A. Sh, Sodikov, U. Kh, Khakkulov, M. K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bulk sampling Direct Conversion of Solar Energy to Electric Energy Electrical Machines and Networks Engineering Formations Nanostructure Nanotechnology Power Electronics Quantum dots Radiation Silicon Solar energy Spectral sensitivity Studies Sulfur Temperature
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Beschreibung
Zusammenfassung:	We show the ability to extend the spectral sensitivity range of silicon photoelements due to the formation of nanoscale structures—quantum dots based on the Si 2 A n B 8– n binary elementary cells—both in the bulk and on the surface of the samples that is expected to allow the development of photoelements.
ISSN:	0003-701X 1934-9424
DOI:	10.3103/S0003701X1504009X