Gate-Optimized Thermoelectric Power Factor in Ultrathin WSe2 Single Crystals

Gate-Optimized Thermoelectric Power Factor in Ultrathin WSe2 Single Crystals

We report an electric field tuning of the thermopower in ultrathin WSe2 single crystals over a wide range of carrier concentration by using electric double-layer (EDL) technique. We succeeded in the optimization of power factor not only in the hole but also in the electron side, which has never been...

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Veröffentlicht in:Nano letters 2016-03, Vol.16 (3), p.2061-2065
Hauptverfasser: Yoshida, Masaro, Iizuka, Takahiko, Saito, Yu, Onga, Masaru, Suzuki, Ryuji, Zhang, Yijin, Iwasa, Yoshihiro, Shimizu, Sunao
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Sprache:eng
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Zusammenfassung:We report an electric field tuning of the thermopower in ultrathin WSe2 single crystals over a wide range of carrier concentration by using electric double-layer (EDL) technique. We succeeded in the optimization of power factor not only in the hole but also in the electron side, which has never been chemically accessed. The maximized values of power factor are one-order larger than that obtained by changing chemical composition, reflecting the clean nature of electrostatic doping.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.6b00075