Measuring the Thickness and Potential Profiles of the Space-Charge Layer at Organic/Organic Interfaces under Illumination and in the Dark by Scanning Kelvin Probe Microscopy

Scanning Kelvin probe microscopy was used to measure band-bending at the model donor/acceptor heterojunction poly­(3-hexylthiophene) (P3HT)/fullerene (C60). Specifically, we measured the variation in the surface potential of C60 films with increasing thicknesses grown on P3HT to produce a surface po...

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Veröffentlicht in:ACS applied materials & interfaces 2016-03, Vol.8 (9), p.5772-5776
Hauptverfasser: Rojas, Geoffrey A, Wu, Yanfei, Haugstad, Greg, Frisbie, C. Daniel
Format: Artikel
Sprache:eng
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Zusammenfassung:Scanning Kelvin probe microscopy was used to measure band-bending at the model donor/acceptor heterojunction poly­(3-hexylthiophene) (P3HT)/fullerene (C60). Specifically, we measured the variation in the surface potential of C60 films with increasing thicknesses grown on P3HT to produce a surface potential profile normal to the substrate both in the dark and under illumination. The results confirm a space-charge carrier region with a thickness of 10 nm, consistent with previous observations. We discuss the possibility that the domain size in bulk heterojunction organic solar cells, which is comparable to the space-charge layer thickness, is actually partly responsible for less than expected electron/hole recombination rates.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.6b00367