Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency

Device Characteristics of CZTSSe Thin-Film Solar Cells with 12.6% Efficiency

A 12.6% Cu2ZnSnSxSe4–x (CZTSSe) solar cell is presented with detailed device characteristics. Both short‐circuit current density (Jsc) and open circuit voltage (Voc) increase in the 12.6% champion, relative to previous devices, due to better bulk CZTSSe quality and improved optical architecture. The...

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Veröffentlicht in:Advanced energy materials 2014-05, Vol.4 (7), p.np-n/a
Hauptverfasser: Wang, Wei, Winkler, Mark T., Gunawan, Oki, Gokmen, Tayfun, Todorov, Teodor K., Zhu, Yu, Mitzi, David B.
Format: Artikel
Sprache:eng
Schlagworte:
Bulk density
Cu2ZnSnSxSe4-x
Current density
Devices
earth-abundant elements
kesterites
Open circuit voltage
Photovoltaic cells
photovoltaic devices
Reduction
Solar cells
solution processing
Thin films
Volatile organic compounds
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Zusammenfassung:A 12.6% Cu2ZnSnSxSe4–x (CZTSSe) solar cell is presented with detailed device characteristics. Both short‐circuit current density (Jsc) and open circuit voltage (Voc) increase in the 12.6% champion, relative to previous devices, due to better bulk CZTSSe quality and improved optical architecture. The reduction in Voc deficit shows opportunities to push CZTSSe solar cells to higher efficiency.
ISSN:1614-6832
1614-6840
DOI:10.1002/aenm.201301465