Increasing the Fill Factor of Inverted P3HT:PCBM Solar Cells Through Surface Modification of Al-Doped ZnO via Phosphonic Acid-Anchored C60 SAMs

Increasing the Fill Factor of Inverted P3HT:PCBM Solar Cells Through Surface Modification of Al-Doped ZnO via Phosphonic Acid-Anchored C60 SAMs

The influence of aluminum‐doped zinc oxide (AZO) electron extraction layers modified with self‐assembled monolayers (SAMs) on inverted polymer solar cells is investigated. It is found that AZO modification with phosphonic acid‐anchored Fullerene–SAMs leads to a reduction of the series resistance, wh...

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Veröffentlicht in:Advanced energy materials 2012-05, Vol.2 (5), p.532-535
Hauptverfasser: Stubhan, Tobias, Salinas, Michael, Ebel, Alexander, Krebs, Frederick C., Hirsch, Andreas, Halik, Marcus, Brabec, Christoph J.
Format: Artikel
Sprache:eng
Schlagworte:
Al-doped ZnO
Aluminum
Azo
Buckminsterfullerene
Extraction
Fullerenes
organic solar cells
phosphonic acids
Photovoltaic cells
SAMs
Solar cells
Zinc oxide
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Zusammenfassung:The influence of aluminum‐doped zinc oxide (AZO) electron extraction layers modified with self‐assembled monolayers (SAMs) on inverted polymer solar cells is investigated. It is found that AZO modification with phosphonic acid‐anchored Fullerene–SAMs leads to a reduction of the series resistance, while increasing the parallel resistance. This results in an increased efficiency from 2.9 to 3.3%.
ISSN:1614-6832
1614-6840
DOI:10.1002/aenm.201100668