Influence of Reactive Ion Etching on THz Transmission and Reflection Properties of NiCr Film Deposited on a Dielectric Substrate

Enhanced terahertz (THz) absorption of NiCr film deposited on a dielectric substrate has been proven by applying a reactive ion etching (RIE) treatment to the dielectric film. Nano-scale nickel-chromium (NiCr) thin films are deposited on RIE treated silicon dioxide (SiO super(2)) dielectric substrates to study the transmission and reflection characteristics. Experimental results suggest that both transmission and reflection of NiCr film are weakened by the RIE treatment. The most significant decrease of transmission is observed in (1~4) THz while that of reflection occurs in (1.7~2.5) THz band. The decrease of both transmission and reflection is more significant for NiCr film with higher thickness. The RIE treatment, which induces a roughened surface of SiO super(2) substrate and increases the effective surface area of NiCr film, enhances the absorption and weakens the transmission and reflection of THz radiation.Original Abstract: Buvo analizuojama NiCr dangu, nusodintu ant dielektrinio pavirsiaus, padidejusi terahercu diapazono bangu (THz) absorbcija, kai dielektriniu dangu apdorojimui buvo naudotas reaktyvusis joninis esdinimas (RIE). Nanomatmenu nikeliochromo (NiCr) plonos dangos buvo nusodinamos ant RIE apdoroto silicio dioksido (SiO sub(2)) dielektrinio pavirsiaus norint istirti suformuotu dangu THz pralaidumo ir atspindzio charakteristikas. Eksperimentiniai rezultatai parode, kad tiek NiCr dangu THz pralaidumas, tiek ju atspindys sumazeja, panaudojus RIE apdirbima. Didziausias pralaidumo sumazejimas stebimas 1 THz-4 THz, o atspindys 1,7 THz-2,5 THz diapazonuose. Pralaidumo ir atspindzio sumazejimas yra didesnis storesnese NiCr dangose. RIE apdirbimas, kuris sukuria siurkstu SiO sub(2) pavirsiu ir padidina efektyvuji NiCr dangos plota, padidina dangu absorbcija ir susilpnina THz spinduliuotes pralaiduma bei atspindi.