The effect of P＋ deep well doping on SET pulse propagation

The change of P＋ deep well doping will affect the charge collection of the active and passive devices in nano-technology, thus affecting the propagated single event transient （SET） pulsewidths in circuits. The propagated SET pulsewidths can be quenched by reducing the doping of P＋ deep well in the appropriate range. The study shows that the doping of P＋ deep well mainly affects the bipolar amplification component of SET current, and that changing the P＋ deep well doping has little effect on NMOS but great effect on PMOS.