Single-crystalline CuO nanowire growth and its electrode-dependent resistive switching characteristics

Resistive switching characteristics of single-crystalline CuO nanowires grown by thermal oxidation was investigated. The compressive stress developed in Cu2O layer prevented further oxidation of Cu and caused CuO nanowire growth, which was driven by the total Gibbs free energy minimization. CuO nanowire with Pt electrode showed Ohmic below 1.1 V and space charge limited current above 1.1 V, while that with Cu electrode showed resistive switching characteristics with sufficient Cu ions to form the metallic filaments from the electrodes.