Synthesis of aligned gallium nitride nanowire quasi-arrays
Self-aligned GaN nanowire quasi-arrays were synthesized on MgO crystal through a simple gas reaction method. They were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray (EDX) spectroscopy and high-resolution transmission el...
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| Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2000-09, Vol.71 (3), p.349-350 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | LI, J. Y CHEN, X. L QIAO, Z. Y CAO, Y. G HE, M XU, T |
| description | Self-aligned GaN nanowire quasi-arrays were synthesized on MgO crystal through a simple gas reaction method. They were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray (EDX) spectroscopy and high-resolution transmission electron microscopy (HRTEM). FE-SEMimages showed that the product consisted of quasi-arrays of nanowires. XRD, EDX and HRTEM indicated that the nanowires were wurtzite GaN single crystals. |
| doi_str_mv | 10.1007/s003390000607 |
| format | Article |
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| ispartof | Applied physics. A, Materials science & processing, 2000-09, Vol.71 (3), p.349-350 |
| issn | 0947-8396 1432-0630 |
| language | eng |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Cross-disciplinary physics: materials science rheology Exact sciences and technology Field emission Gallium nitrides III-V semiconductors Iron Materials science Nanocomposites Nanomaterials Nanoscale materials and structures: fabrication and characterization Nanostructure Nanowires Other semiconductors Physics Scanning electron microscopy Specific materials X-rays |
| title | Synthesis of aligned gallium nitride nanowire quasi-arrays |
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