Synthesis of aligned gallium nitride nanowire quasi-arrays

Synthesis of aligned gallium nitride nanowire quasi-arrays

Self-aligned GaN nanowire quasi-arrays were synthesized on MgO crystal through a simple gas reaction method. They were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray (EDX) spectroscopy and high-resolution transmission el...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2000-09, Vol.71 (3), p.349-350
Hauptverfasser: LI, J. Y, CHEN, X. L, QIAO, Z. Y, CAO, Y. G, HE, M, XU, T
Format: Artikel
Sprache:eng
Schlagworte:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Field emission
Gallium nitrides
III-V semiconductors
Iron
Materials science
Nanocomposites
Nanomaterials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanowires
Other semiconductors
Physics
Scanning electron microscopy
Specific materials
X-rays
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Zusammenfassung:Self-aligned GaN nanowire quasi-arrays were synthesized on MgO crystal through a simple gas reaction method. They were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray (EDX) spectroscopy and high-resolution transmission electron microscopy (HRTEM). FE-SEMimages showed that the product consisted of quasi-arrays of nanowires. XRD, EDX and HRTEM indicated that the nanowires were wurtzite GaN single crystals.
ISSN:0947-8396
1432-0630
DOI:10.1007/s003390000607