Scaling performance of Ga2O3/GaN nanowire field effect transistor

A three-dimensional finite element solver is applied to investigate the performance of Ga2O3/GaN nanowire transistors. Experimental nanowire results of 50 nm gate length are provided to compare with the simulation, and they show good agreement. The performance of a shorter gate length (

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2013-10, Vol.114 (16)
Hauptverfasser:	Li, Chi-Kang, Yeh, Po-Chun, Yu, Jeng-Wei, Peng, Lung-Han, Wu, Yuh-Renn
Format:	Artikel
Sprache:	eng
Schlagworte:	Gallium nitrides Gates Nanocomposites Nanomaterials Nanowires Semiconductor devices Solvers Three dimensional
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!