Scaling performance of Ga2O3/GaN nanowire field effect transistor

Scaling performance of Ga2O3/GaN nanowire field effect transistor

A three-dimensional finite element solver is applied to investigate the performance of Ga2O3/GaN nanowire transistors. Experimental nanowire results of 50 nm gate length are provided to compare with the simulation, and they show good agreement. The performance of a shorter gate length (

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Veröffentlicht in:Journal of applied physics 2013-10, Vol.114 (16)
Hauptverfasser: Li, Chi-Kang, Yeh, Po-Chun, Yu, Jeng-Wei, Peng, Lung-Han, Wu, Yuh-Renn
Format: Artikel
Sprache:eng
Schlagworte:
Gallium nitrides
Gates
Nanocomposites
Nanomaterials
Nanowires
Semiconductor devices
Solvers
Three dimensional
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Zusammenfassung:A three-dimensional finite element solver is applied to investigate the performance of Ga2O3/GaN nanowire transistors. Experimental nanowire results of 50 nm gate length are provided to compare with the simulation, and they show good agreement. The performance of a shorter gate length (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4827190